RF SOI technologies were created from silicon processes originally used for high speed logic applications, but the technology was modified to meet the performance needs of RF switches. of smartphones based on Soitec RF-SOI technology. Quick-Links . RF-SOI PRODUCTS . However, the runaway success of RF-SOI and the growing list of recent announcements related to FD-SOI with integrated RF has lead to some confusion in the press and social media. SAN DIEGO – July 6, 2015 – Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the UltraCMOS® 11 platform, the industry’s first RF SOI technology built on GLOBALFOUNDRIES’ 130 nm 300 mm RF technology platform.
RF SOI is the RF version of silicon-on-insulator (SOI) technology, which is different than fully-depleted SOI (FD-SOI) for digital chips.
RF Technologies Performance, integration and area-optimized platforms for next-generation connectivity We live in a connected world. Since the first mobile phone call more than four decades ago, our demand for data—and anywhere, all-the-time connectivity for access to that data—keeps growing exponentially. As an RF industry leader, GLOBALFOUNDRIES is working with forward-thinking companies to enable new levels of connectivity—and an era of connected intelligence—with a portfolio of established and advanced RF SOI platforms targeting low noise amplifiers, RF switches, phased-array antennas and control function integration in RF front-end modules for advanced 4G LTE, mmWave beamforming and sub 6 GHz 5G applications.Advanced & mainstream technologies for automotive radar, IoT and RF/mmWave wireless connectivity such as LTE/5G and Wi-Fi/WiGigPerformance-tuned platforms for automotive LiDAR/RADAR & wireless/wired/optical communicationsCost-effective, integration-optimized platforms for Wi-Fi & cellular power amplifiers, displacing GaAs technologies
[VIDEO] STM32 Security in Practice or How to Protect Firmware and UsersThis process supports multiple active devices, such as 2.5 V thick Gate Oxide (GO) Metal-Oxide-Semiconductors (MOS) for standard cells and IOs, 2.5 V MOS optimized for RF switches, 1.2 V thin GO MOS optimized for LNAs, and high breakdown-voltage N-type Lateral Drain Extended MOS (NLDMOS) optimized for PAs in order to address all key RF components.
There are several dynamics at play with RF SOI. Excellent channel isolation better than >-40 dBm, insertion loss of <0.35 dB, low harmonics of better than 105dBc at cellular power levels and inter-modulation distortion below -117 dBm have been demonstrated. AVX Corp., Broadcom Inc., Murata Manufacturing Co. Ltd., Qorvo Inc., Qualcomm Technologies Inc., Skyworks Solutions ( News - Alert ) Inc., STMicroelectronics NV, Tai-Saw Technology Co. Ltd., Taiyo Yuden Co. Ltd., and TDK Corp. are some of the major market participants. Scheinbar bist du neu hier. Tomorrow with 5G, increased data speed will allow also vehicle to vehicle communication, virtual reality, smart home and more.A Trap Rich layer is added below the buried oxide to provide outstanding RF performances.The front-end module plays a key role in reaching these performance levels.For devices with lower linearity specifications.RFeSI is our mainstream product line and typically targets LTE-Advanced and 5G specifications and addresses different performance requirements.HR-SOI products typically target 2G and 3G specifications.For cost sensitive highly integrated devices.For devices with stringent linearity specifications.
There are several dynamics at play with RF SOI. 100%. Our RF-SOI products have become a standard of the industry. What are the top players in the market?
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